Author(s): K. K. Pathak, Mimi Akash Pateria, Kusumanjali Deshmukh

Email(s): krishnakumarpathak81@gmail.com

DOI: 10.5958/2321-581X.2018.00010.7   

Address: K. K. Pathak1*, Mimi Akash Pateria2, Kusumanjali Deshmukh2
1Department of Applied Physics, Raipur Institute of Technology, Chhatauna, Mandir Hasuad, Raipur 492101, Chhattisgarh, India
2 Department of Applied Physics, Shri Shankaracharya Group of Institutions, Junwani, Bhilai, Chhattisgarh, India
*Corresponding Author

Published In:   Volume - 9,      Issue - 1,     Year - 2018


ABSTRACT:
Rare earth (Sm or Nd) doped CdSe nanocrystalline thin film were grown onto the glass substrate by chemical bath deposition (CBD) method. Crystal structure were determined by XRD. The emission spectra of photoluminescence (PL) for Sm or Nd doped CdSe nanocrystalline thin film lies at 601nm. The band edge luminescence is responsible for PL. CdSe:Sm (6 ml, 0.01 M) and CdSe:Nd (4 ml, 0.01 M) give the highest PL intensity.


Cite this article:
K. K. Pathak, Mimi Akash Pateria, Kusumanjali Deshmukh. Comparative Study of Optical and Electrical Properties of CdSe:Sm and CdSe:Nd Nanocrystalline Thin Film. Research J. Engineering and Tech. 2018;9(1): 67-69 doi: 10.5958/2321-581X.2018.00010.7


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DOI: 10.5958/2321-581X 


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